unisonic technologies co., ltd 02n50 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2010 unisonic technologies co., ltd qw-r502-975.a 0.2a, 500v n-channel power mosfet ? description the utc 02n50 is an n-channel mosfet, it uses utc?s advanced technology to provide the customers with high breakdown voltage ? features * r ds(on) =75 ? @v gs =10v, i d =0.15a * high breakdown voltage ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 02n50l-tm3-t 02N50G-TM3-T to-251 g d s tube note: pin assignment: g: gate d: drain s: source
02n50 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-975.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v drain current continuous i d 0.2 a pulsed i dm 1 a avalanche current (note 1) i ar 0.2 a power dissipation p d 40 w junction temperature t j 150 c storage temperature range t stg -55 ~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 500 v drain-source leakage current i dss v ds =500v, v gs =0v, t a =25c 10 a gate-source leakage current forward i gss v gs =+30v, v ds =0v +100 na reverse v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.5 4.5 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =0.15a, t a =25c 62 75 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 200 pf output capacitance c oss 20 pf reverse transfer capacitance c rss 8 pf switching parameters total gate charge q g v gs =10v, i d =0.2a, v ps =400v 3.0 4.5 nc gate to source charge q gs 0.45 0.7 nc gate to drain charge q gd 0.4 0.75 nc turn-on delay time t d ( on ) v dd =250v, i d =0.2a, r g =25 ? 9 ns rise time t r 4 ns turn-off delay time t d ( off ) 28 ns fall-time t f 45 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 0.2 a maximum body-diode pulsed current i sm 1 a drain-source diode forward voltage v sd i s =0.2a, v gs =0v 1 v
02n50 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-975.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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